FQP50N06 数据手册
其他文档
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: JSMSEMI FQP50N06
- Package: TO-220
- Manufacturer: JSMSEMI
- Type: N Channel
- Power Dissipation (Pd): 120W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 50A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,25A
- Series: QFET®
- Packaging: Tube
- Part Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FQP5